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NP60N03SUG
300
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
100
FORWARD TRANSFER CHARACTERISTICS
200
100
0
V GS = 10 V
Pulsed
10
1
0.1
0.01
0.001
0.0001
T ch = 175 ° C
150 ° C
125 ° C
75 ° C
25 ° C
? 25 ° C
? 55 ° C
V DS = 10 V
Pulsed
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
5
6
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
5
4
1000
100
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2
10
1
T ch = ? 55 ° C
? 25 ° C
25 ° C
75 ° C
1
V DS = V GS
I D = 250 μ A
0.1
125 ° C
150 ° C
175 ° C
V DS = 5 V
Pulsed
0
0.01
-75
-25
25
75
125
175
225
0.01
0.1
1
10
100
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
V GS = 10 V
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
I D = 30 A
8
6
4
2
0
Pulsed
8
6
4
2
0
Pulsed
1
10
100
1000
0
4
8
12
16
20
4
I D - Drain Current - A
Data Sheet D19547EJ1V0DS
V GS - Gate to Source Voltage - V
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